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Henan Liming Heavy Industry Ciencia y Tecnología Co. LTD, fue fundada en 1987,que principalmente fabrica equipos detrituracionesymoliendas grandes y medianas. Se trata de una moderna empresa con la investigación, fabricación y ventas juntos. La matriz se encuentra enla zona HI-TECH Industry Development de Zhengzhou y cubiertas 80.000 m ².

No.169, Science (Kexue) Avenue,
National HI-TECH Industry
Development Zone,

Zhengzhou, China
E-mail: [email protected]
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improvement in electrical properties of hafnium and
  • Improvement in electrical properties of hafnium and

    2020年4月7日  Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower

    Charlar en Línea
  • Improvement in electrical properties of hafnium and

    2006年7月5日  Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When

    Charlar en Línea
  • Improvement in electrical properties of hafnium and

    Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are

    Charlar en Línea
  • Improvement in electrical properties of hafnium and

    Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated and it was indicated that

    Charlar en Línea
  • Improvement in electrical properties of hafnium and

    2006年7月5日  Article. Improvement in electrical properties of hafnium and zirconium silicates by postnitriding. July 2006; Journal of Physics Condensed Matter 18(26):6009

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  • Improvement in electrical properties of hafnium and

    Made available by U.S. Department of Energy Office of Scientific and Technical Information ...

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  • Improvement in electrical properties of hafnium and

    2006年6月19日  This website requires cookies, and the limited processing of your personal data in order to function. By using the site you are agreeing to this as outlined in our

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  • Electronic properties of hafnium oxide: A contribution

    2016年2月15日  Experimental X-ray photoelectron spectra (XPS) of the Hf 4 f 7 / 2 – Hf 4 f 5 / 2 atomic level and the valence band of stoichiometric HfO 2 or non-stoichiometric

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  • Electrical properties and diffusion behavior of hafnium in

    2006年6月28日  Electrical properties and diffusivity of Hf in single crystal Si have been studied. Several deep level defects were found for Hf in both the upper and lower half of

    Charlar en Línea
  • Simultaneously enhancing mechanical properties and

    1 天前  1.Introduction. Copper alloys have been used extensively to high-speed railway, electronic components, aerospace and other fields [1], [2], [3].Among them, the Cu-Cr

    Charlar en Línea
  • Improvement in electrical properties of hafnium and

    Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower by more than one order of magnitude as compared with that of the as-deposited films.

    Charlar en Línea
  • Improvement in electrical properties of hafnium and

    Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower by more than one order of magnitude as compared with that of the as-deposited films.

    Charlar en Línea
  • Improving electrical conductivity and wear resistance of

    2021年12月20日  Matenoglou et al. [27] indicated that the electrical conductivity of Ti xTa 1-xN increases continuously with increasing Ta content, while Tang [28] reported that the electrical conductivity of Ta xZr 1-xN y decreases with incorporation of Ta. (3) What is the mechanism of improvement in wear resistance of TMN films? There are few reports

    Charlar en Línea
  • Fabrication characterization of hafnium oxide thin films

    2019年1月1日  Currently, the industry is looking for new ferroelectric materials with excellent electrical properties materials and that are also environmentally friendly. Hafnium oxide (Hafnai or HfO 2 )-based materials have become attractive candidates because they are a simple binary oxide (non-perovskite structure) but exhibit ferroelectric properties ...

    Charlar en Línea
  • Simultaneously enhancing mechanical properties and

    1 天前  1.Introduction. Copper alloys have been used extensively to high-speed railway, electronic components, aerospace and other fields [1], [2], [3].Among them, the Cu-Cr alloy has been paid more attention because of its excellent electrical conductivity and outstanding mechanical properties [4], [5].With the development of the 5 th generation (5 G)

    Charlar en Línea
  • A Study on the Improvement of Dielectric, Anticorrosive

    The mechanical, thermal, electrical, and electrochemical properties of carbon nanotubes (CNTs) are excellent. The addition of titanium disulphide (TiS2) and (3-mercaptopropyl)trimethoxysilane (MPTMS) to epoxy matrix (EP) coatings has improved the anticorrosive and mechanical properties of carbon nanotubes (CNTs) for CNT-based

    Charlar en Línea
  • Materials Free Full-Text Studies of Electrical Parameters

    This work demonstrated the optimization of HiPIMS reactive magnetron sputtering of hafnium oxynitride (HfOxNy) thin films. During the optimization procedure, employing Taguchi orthogonal tables, the parameters of examined dielectric films were explored, utilizing optical methods (spectroscopic ellipsometry and refractometry), electrical

    Charlar en Línea
  • Electrical properties of ultrathin HfO2 gate dielectrics on

    2006年7月1日  Ultrathin HfO2 gate dielectrics have been deposited on strained Si0.69Ge0.3C0.01 layers by rf magnetron sputtering. The polycrystalline HfO2 film with a physical thickness of ∼6.5 nm and an amorphous interfacial layer with a physical thickness of ∼2.5 nm have been observed by high resolution transmission electron microscopy

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  • (PDF) Hafnium Oxide (HfO2) – a Multifunctional Oxide

    2022年3月25日  Additionally, the use of polymers in improving the RS properties of lead (Pb) and Pb-free HP devices was described in several recent reports. Thus, this review explored the in-depth role of ...

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  • Electrical Properties of Au/n-GaN Schottky Junctions with

    2018年8月1日  The temperature-dependent electrical properties of Au/GaN Schottky diodes with an Al2O3 layer prepared by using atomic layer deposition (ALD) were investigated. Compared to the Au/GaN junction, the Au/Al2O3/GaN junction was found to have lower barrier heights and higher ideality factors. For the Au/GaN junction, the native oxide and

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  • Electric field-induced crystallization of ferroelectric

    2021年11月15日  However, recent works discovered a new effect in the hafnium oxide system, namely electric field-induced crystallization 10. This allows to apply electric fields in order to crystallize the ...

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  • Improvement in electrical properties of hafnium and

    Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower by more than one order of magnitude as compared with that of the as-deposited films. The capacitance

    Charlar en Línea
  • Improvement in electrical properties of hafnium and

    Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower by more than one order of magnitude as compared with that of the as-deposited films.

    Charlar en Línea
  • Improving electrical conductivity and wear resistance of

    2021年12月20日  Matenoglou et al. [27] indicated that the electrical conductivity of Ti xTa 1-xN increases continuously with increasing Ta content, while Tang [28] reported that the electrical conductivity of Ta xZr 1-xN y decreases with incorporation of Ta. (3) What is the mechanism of improvement in wear resistance of TMN films? There are few reports

    Charlar en Línea
  • Interface properties study on SiC MOS with high-k

    2018年12月6日  High k dielectrics, such as Al 2 O 3, has attracted increasing research attention for its use as the gate dielectric of 4H-SiC MOS capacitors.Since the dielectric constant of Al 2 O 3 is not high enough, many other high-k dielectrics are actively explored. In this letter, a report of the interface properties of 4H-SiC MOS capacitors with Hafnium

    Charlar en Línea
  • Materials Free Full-Text Studies of Electrical Parameters

    This work demonstrated the optimization of HiPIMS reactive magnetron sputtering of hafnium oxynitride (HfOxNy) thin films. During the optimization procedure, employing Taguchi orthogonal tables, the parameters of examined dielectric films were explored, utilizing optical methods (spectroscopic ellipsometry and refractometry), electrical

    Charlar en Línea
  • Simultaneously enhancing mechanical properties and

    1 天前  1.Introduction. Copper alloys have been used extensively to high-speed railway, electronic components, aerospace and other fields [1], [2], [3].Among them, the Cu-Cr alloy has been paid more attention because of its excellent electrical conductivity and outstanding mechanical properties [4], [5].With the development of the 5 th generation (5 G)

    Charlar en Línea
  • Electrical properties of ultrathin HfO2 gate dielectrics on

    2006年7月1日  Ultrathin HfO2 gate dielectrics have been deposited on strained Si0.69Ge0.3C0.01 layers by rf magnetron sputtering. The polycrystalline HfO2 film with a physical thickness of ∼6.5 nm and an amorphous interfacial layer with a physical thickness of ∼2.5 nm have been observed by high resolution transmission electron microscopy

    Charlar en Línea
  • A Study on the Improvement of Dielectric, Anticorrosive

    The mechanical, thermal, electrical, and electrochemical properties of carbon nanotubes (CNTs) are excellent. The addition of titanium disulphide (TiS2) and (3-mercaptopropyl)trimethoxysilane (MPTMS) to epoxy matrix (EP) coatings has improved the anticorrosive and mechanical properties of carbon nanotubes (CNTs) for CNT-based

    Charlar en Línea
  • Microstructure and High-Temperature Ablation Behaviour

    2023年3月22日  W is a widely used refractory metal with ultra-high melting point up to 3410 deg;C. However, its applications are limited by poor ablation resistance under high-temperature flame and air flow, which is crucial for aerospace vehicles. To improve the ablation resistance of W under extreme conditions, W-Y alloys doped with different Hf

    Charlar en Línea